GFD30N03 vishay semiconductor document number 74557 www.vishay.com 10-dec-01 1 new product n-channel enhancement-mode mosfet maximum ratings and thermal characteristics (t c = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current i d 43 a pulsed drain current (1) i dm 120 maximum power dissipation t c = 25? p d 44.5 w t c = 100? 17.8 operating junction and storage temperature range t j , t stg 55 to 150 ? junction-to-case thermal resistance r jc 2.8 ?/w junction-to-ambient thermal resistance (2) r ja 50 note: (1) pulse width limited by maximum junction temperature (2) 1-in 2 2oz. cu pcb mounted v ds 30v r ds(on) 15 m ? i d 43a features ?advanced trench process technology ?high density cell design for ultra low on-resistance ?specially designed for low voltage dc/dc converters ?fast switching for high efficiency mechanical data case: jedec to-252 molded plastic body terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals weight: 0.011oz., 0.4g 0.190 (4.826) 0.243 (6.172) 0.063 (1.6) 0.165 (4.191) 0.100 (2.54) 0.118 (3.0) 0.245 (6.22) 0.235 (5.97) 0.040 (1.02) 0.025 (0.64) 0.410 (10.41) 0.380 (9.65) 0.170 (4.32) min. 0.214 (5.44) 0.206 (5.23) 0.265 (6.73) 0.255 (6.48) 0.023 (0.58) 0.018 (0.46) 0.094 (2.39) 0.087 (2.21) 0.204 (5.18) 0.156 (3.96) 0.197 (5.00) 0.177 (4.49) 0.035 (0.89) 0.028 (0.71) gs d 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.009 (0.23) 0.001 (0.03) 0.020 (0.51) min. 0.060 (1.52) 0.045 (1.14) 0.050 (1.27) 0.035 (0.89) to-252 (dpak) dimensions in inches and (millimeters) mounting pad layout g d s t rench g en f et
GFD30N03 vishay semiconductor www.vishay.com document number 74557 2 10-dec-01 electrical characteristics (t j = 25? unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v gs = ?0v, v ds = 0v ?00 na zero gate voltage drain current i dss v ds = 30v, v gs = 0v 1 a on-state drain current (1) i d(on) v ds 5v, v gs = 10v 40 a drain-source on-state resistance (2) r ds(on) v gs = 10v, i d = 20a 12.5 15 m ? v gs = 4.5v, i d = 17a 17.5 21 forward transconductance (1) g fs v ds = 15v, i d = 20a 35 s dynamic total gate charge q g v ds =15v, v gs =5.0v, i d =20a 16 22 ?448 gate-source charge q gs v ds = 15v, v gs = 10v 5.7 nc gate-drain charge q gd i d = 20a 4.7 turn-on delay time t d(on) ?020 rise time t r v dd = 15v, r l = 15 ? ?18 ns turn-off delay time t d(off) i d ? 1a, v gen = 10v ?775 fall time t f r g = 6 ? ?326 input capacitance c iss v gs = 0v 1850 output capacitance c oss v ds = 15v 315 pf reverse transfer capacitance c rss f = 1.0mh z 150 source-drain diode max diode forward current i s 20a diode forward voltage (1) v sd i s = 20a, v gs = 0v 0.91 1.3 v note: (1) pulse test; pulse width 300 s, duty cycle 2% g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
GFD30N03 vishay semiconductor document number 74557 www.vishay.com 10-dec-01 3 0 10 20 30 50 60 70 80 01234 5 fig. 1 ?output characteristics 0 0.005 0.015 0.02 0.03 0.01 0.025 0.035 02030 10 50 40 60 80 70 fig. 4 ?on-resistance vs. drain current 0 10 20 40 30 50 60 12345 fig. 2 ?transfer characteristics 40 v gs = 3.0v 0.8 0.6 1.4 1.6 1.2 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 5 ?on-resistance vs. junction temperature v gs = 10v i d = 20a v gs = 4.5v 25 c v gs = 10v t j = 125 c --55 c 3.5v 4.0v 6.0v 4.5v v ds = 10v 0.6 1.4 1.2 1.6 1.8 2.0 0.8 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 3 ?threshold voltage vs. temperature i d = 250 a i d -- drain source current (a) v ds -- drain-to-source voltage (v) r ds(on) -- on-resistance ( ? ) i d -- drain current (a) i d -- drain current (a) v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) v gs(th) -- threshold voltage (v) t j -- junction temperature ( c) 5.0v v gs = 10v ratings and characteristic curves (t a = 25 c unless otherwise noted)
GFD30N03 vishay semiconductor www.vishay.com document number 74557 4 10-dec-01 0 500 1000 1500 2000 2500 0 5 10 15 30 20 25 fig. 8 capacitance c iss c rss c oss f = 1mh z v gs = 0v 0 2 4 6 8 10 0 5 10 20 15 fig. 7 gate charge 25 30 35 v ds = 15v i d = 20a 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t j = 125 c fig. 9 source-drain diode forward voltage 25 c --55 c v gs = 0v i s -- source current (a) v sd -- source-to-drain voltage (v) q g -- gate charge (nc) v gs -- gate-to-source voltage (v) c -- capacitance (pf) v ds -- drain-to-source voltage (v) 0 0.01 0.02 0.04 0.03 0.05 246810 fig. 6 on-resistance vs. gate-to-source voltage i d = 20a t j = 125 c 25 c r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) ratings and characteristic curves (t a = 25 c unless otherwise noted)
GFD30N03 vishay semiconductor document number 74557 www.vishay.com 10-dec-01 5 fig. 10 transient thermal impedance fig. 12 maximum safe operating area v ds -- drain-source voltage (v) 0.1 1 1 10 100 1000 10 0.1 1 0.1 0.01 0.01 0.001 0.0001 1 10 100 fig. 11 power vs. pulse duration v gs = 10v single pulse r jc = 2.8 c/w t c = 25 c r ds(on) limit 100 s 1ms 10ms dc 0.1 0.01 0.001 0.0001 0 200 400 600 800 1000 110 i d -- drain current (a) single pulse r jc = 2.8 c/w t c = 25 c 100ms ratings and characteristic curves (t a = 25 c unless otherwise noted)
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